 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification 3 Features * High reliability * Low reverse current 1 2 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 A Capacitance between Terminals at VR = 1 V, f = 1 MHz Symbol VF IR V(BR)R CT Min. 45 Typ. 2 Max. 0.37 1 Unit V A V pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/03/2009 RB706F-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/03/2009 |
Price & Availability of RB706F-40
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |